dmg3401lsn document number: ds35502 rev. 4 - 2 1 of 6 www.diodes.com october 2012 ? diodes incorporated dmg3401lsn new product 30v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c -30v 50m @ v gs = -10v -3.7a 60m @ v gs = -4.5v -3.3a 85m @ v gs = -2.5v -2.7a description this new generation small-signal enhancement mode mosfet features low on-resistance and fast switching, making it ideal for high efficiency power management applications. applications ? motor control ? backlighting ? dc-dc converters ? power management functions features ? low input capacitance ? low on-resistance ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc59 ? case material: molded plastic ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMG3401LSN-7 sc59 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view e q uivalent circuit to p view d g s g34 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) source gate drain sc59 g34 ym
dmg3401lsn document number: ds35502 rev. 4 - 2 2 of 6 www.diodes.com october 2012 ? diodes incorporated dmg3401lsn new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 12 v continuous drain current (note 5) v gs = -10v steady state t a = +25c t a = +70c i d -3.0 -2.3 a continuous drain current (note 6) v gs = -10v steady state t a = +25c t a = +70c i d -3.7 -2.9 a pulsed drain current (10s pulse, duty cycle = 1%) i dm -30 a maximum body diode continuous current (note 6) i s -1.5 a thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 0.8 w (note 6) 1.2 thermal resistance, junction to ambient (note 5) r ja 159 c/w (note 6) 105 thermal resistance, junction to case (note 6) r jc 36 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1.0 a v ds =-30v, v gs = 0v gate-body leakage i gss - - 100 na v gs = 1 2v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.5 -1.0 -1.3 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 41 50 m v gs = -10v, i d = -4a - 47 60 v gs = -4.5v, i d = -3.5a - 60 85 v gs = -2.5v, i d = -2.5a forward transfer admittance |y fs | - 12 - s v ds = -5v, i d = -4a diode forward voltage v sd - -0.8 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 8) input capacitance c iss - 1326 - pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 103 - reverse transfer capacitance c rss - 71 - gate resistance r g - 7.3 - v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = -4.5v) q g - 11.6 - nc v dd = -15v, i d = -4a total gate charge (v gs = -10v) q g - 25.1 - gate-source charge q g s - 2 - gate-drain charge q g d - 1.7 - turn-on delay time t d ( on ) - 8 - ns v ds = -15v, v gs = -10v, r gen = 6 ? , r l = 3.75 ? turn-on rise time t r - 13 - turn-off delay time t d ( off ) - 71 - turn-off fall time t f - 38 - notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2o z copper, with 1inch square copper pad layout 7 .short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing
dmg3401lsn document number: ds35502 rev. 4 - 2 3 of 6 www.diodes.com october 2012 ? diodes incorporated dmg3401lsn new product 12 16 20 0 4 8 0 0.5 1.0 1.5 2.0 -v , drain -source voltage (v) figure 1 typical output characteristics ds -i , d r ain c u r r en t (a) d v= -1.5v gs v= -2.0v gs v= -2.5v gs v= -10v gs v= -4.5v gs 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4 8 -v , gate-source voltage (v) gs figure 2 typical transfer characteristics -i , d r ai n c u r r e n t (a) d t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = -5.0v ds 0.02 0.04 0.06 0.08 0.12 048121620 0.10 0 -i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v = -4.5v gs v = -2.5v gs v = -1.8v gs 0.02 0.04 0.06 0.08 0.12 024 6810 0.10 0 -v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i = -4.3a d i = -2.5a d 0.02 0.04 0.06 0.08 04 8121620 0.10 0 -i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs 0.4 0.6 0.8 1.2 1.4 1.6 1.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j figure 6 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -4.5v i = -5a gs d v = -10v i = -10a gs d
dmg3401lsn document number: ds35502 rev. 4 - 2 4 of 6 www.diodes.com october 2012 ? diodes incorporated dmg3401lsn new product 0.02 0.04 0.06 0.08 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j figure 7 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v= -10v i= a gs d -10 v=5v i= a gs d -4. -5 0.2 0.4 0.6 0.8 1.2 1.4 1.0 0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 8 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) -i = 1ma d -i = 250a d 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 8 -v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd -i , s o u r c e c u r r e n t (a) s t= 25c a 10,000 c , j u n c t i o n c a p a c i t an c e (p f ) t 1,000 10 0 5 10 15 20 25 30 -v , drain-source voltage (v) figure 10 typical junction capacitance ds 100 c oss c rss f = 1mhz c iss 0 2 4 6 8 10 0481216202428 q , total gate charge (nc) figure 11 gate-charge characteristics g -v , g a t e-s o u r c e v o l t a g e (v) gs v = -15v i= -4.3a ds d 0.1 1 10 100 -v , drain-source voltage (v) figure 12 soa, safe operation area ds 100 -i , d r ain c u r r en t (a) d 10 1 0.1 0.01 r limited ds(on) t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p= 10ms w p = 1ms w p = 100s w p = 10s w
dmg3401lsn document number: ds35502 rev. 4 - 2 5 of 6 www.diodes.com october 2012 ? diodes incorporated dmg3401lsn new product 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) figure 13 transient thermal resistance 0.001 r(t), t r ansien t t h e r mal r esis t an c e 0.01 0.1 1 r (t) = r(t) * r r = 160c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sc59 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d - - 0.95 g - - 1.90 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 n 0.70 0.80 0.75 0 8 - all dimensions in mm dimensions value (in mm) z 3.4 x 0.8 y 1.0 c 2.4 e 1.35 x e y c z a m j l d b c h k g n
dmg3401lsn document number: ds35502 rev. 4 - 2 6 of 6 www.diodes.com october 2012 ? diodes incorporated dmg3401lsn new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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